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| CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET * * * * * * HiRel Discrete and Microwave Semiconductor For professional pre- and driver-amplifiers For frequencies from 500 MHz to 20 GHz Hermetically sealed microwave package Low noise figure, high gain, moderate power Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5613/008, Type Variant No.s 01 to 05 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 S 3 D 4 S Package CFY25-P (ql) CFY25-23 (ql) CFY25-23P (ql) CFY25-20 (ql) CFY25-20P (ql) - see below G Micro-X CFY25-nnl: specifies noise, gain and output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q62703F120 on request on request Q62703F119 (see order instructions for ordering example) Semiconductor Group 1 of 8 Draft D, Sep. 0000 CFY25 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation 2) Soldering temperature 3) Thermal Resistance Junction-soldering point Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol Values 5 7 - 5... + 0.5 80 1.5 + 17 175 - 65... + 175 250 230 Unit V V V mA mA dBm C C mW C Rth JS 410 K/W Notes.: 1) For VDS 3 V. For VDS > 3 V, derating is required. 2) At TS = + 72.5 C. For TS > + 72.5 C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 8 Draft D, Sep. 0000 CFY25 Electrical Characteristics (at TA=25C; unless otherwise specified) Parameter Symbol min. Values typ. max. Unit DC Characteristics Drain-source saturation current VDS = 3 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 1 mA Drain current at pinch-off VDS = 3 V, VGS = - 4 V Gate leakage current at pinch-off VDS = 3 V, VGS = - 4 V Transconductance VDS = 3 V, ID = 15 mA Gate leakage current at operation VDS = 3 V, ID = 15 mA Thermal resistance junction to soldering point IDss -VGth IDp 15 0.3 30 1.0 < 100 60 3.0 mA V A -IGp - < 100 200 A gm15 35 40 - mS -IG15 - <1 2 A Rth JS - 370 - K/W Semiconductor Group 3 of 8 Draft D, Sep. 0000 CFY25 Electrical Characteristics (continued) Parameter Symbol min. Values typ. max. Unit AC Characteristics Noise figure 1) VDS = 3 V, ID = 15 mA, f = 12 GHz CFY25-P CFY25-20, -20P CFY25-23, -23P Associated gain. 1) VDS = 3 V, ID = 15 mA, f = 12 GHz CFY25-P CFY25-20, -20P CFY25-23, -23P Output power at 1 dB gain compression 2) P1dB VDS = 3 V, ID(RF off) = 20 mA, f = 12 GHz CFY25-20, -23 CFY25-20P, 23P, -P Linear power gain 2) VDS = 3 V, ID = 20 mA, f = 12 GHz, Pin = 0 dBm CFY25-20 CFY25-23 CFY25-20P, -P CFY25-23P Notes.: 1) Noise figure / sssociated gain characteristics given for minimum noise figure matching conditions (fixed generic matching, no fine-tuning). 2) Output power / linear power gain characteristics given for optimum output power matching conditions (fixed generic matching, no fine-tuning). 8.5 8.0 9.2 8.5 9.2 8.5 Glp 14 15 15 dB 8.5 8.0 > 8.5 9 8.7 dBm Ga < 2.3 1.9 2.2 2.1 2.4 dB NF dB Semiconductor Group 4 of 8 Draft D, Sep. 0000 CFY25 Typical Common Source S-Parameters CFY25-20 f |S11| 11,7 11,0 10,4 9,9 9,6 9,3 9,1 8,8 8,5 8,3 8,1 7,9 7,7 7,6 7,5 7,4 7,4 7,4 7,6 Semiconductor Group 5 of 8 Draft D, Sep. 0000 CFY25 Typical Common Source S-Parameters CFY25-20 (continued) f [GHz] 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [mag] 0,953 0,921 0,892 0,861 0,836 0,814 0,790 0,768 0,749 0,731 0,714 0,699 0,683 0,669 0,657 0,645 0,632 0,620 0,609 0,600 0,592 0,586 0,579 0,574 0,571 0,566 0,563 0,561 0,559 0,556 0,556 0,556 0,557 0,559 0,561 0,565 6 of 8 Draft D, Sep. 0000 CFY25 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: Q.......... CFY25- (nnl) (ql) (nnl): Noise/Gain/Power Level (ql): Quality Level Ordering Example: Ordering Code: Q62703F119 CFY25-20P For CFY25, Noise/Gain/Power Level 20P: NF < 2.1dB, Ga > 8.5 dB, P1dB > 14 dBm @ 12 GHz in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: ++89 6362 4480 ++89 6362 5568 martin.wimmers@siemens-scg.com Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich Semiconductor Group 7 of 8 Draft D, Sep. 0000 CFY25 Micro-X Package Published by Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D81617 Munich. (c) Siemens AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 8 of 8 Draft D, Sep. 0000 |
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